Product Datasheet Search Results:
6 Pages, 178 KB, Scan- IRF632
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 12A, 150-200 V
4 Pages, 200 KB, Original- IRF632
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF632
- Frederick Components
- Power MOSFET Selection Guide
19 Pages, 625 KB, Original- IRF632
- Motorola / Freescale Semiconductor
- TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
5 Pages, 163 KB, Scan- IRF632
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A.
2 Pages, 121 KB, Scan- IRF632
- General Electric
- Power Transistor Data Book 1985
5 Pages, 176 KB, Scan- IRF632
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 186 KB, Scan- IRF632R
- Harris Semiconductor
- Power MOSFET Data Book 1990
1 Pages, 44 KB, Original- IRF632
- International Rectifier
- TO-220 N-Channel HEXFET Power MOSFET
1 Pages, 41 KB, Original- IRF632R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
Various/IRF632R
{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"4.8","I(D) Abs. Max.(A) Drain Curr.":"5.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"50n","r(DS)on Max. (Ohms)":"600m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"32","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"3.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"5.0","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pack...
1296 Bytes - 20:42:07, 16 November 2024
