Product Datasheet Search Results:
6 Pages, 175 KB, Scan- IRF610PBF
- International Rectifier
- 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
9 Pages, 228 KB, Original- IRF610PBF
- Vishay [siliconix]
- MOSFET N-CH 200V 3.3A TO-220AB - IRF610PBF
Product Details Search Results:
Siliconix_vishay/IRF610PBF
789 Bytes - 01:56:35, 17 November 2024
Vishay.com/IRF610PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)x Series Side 1 IR(F,L)x Series Side 2","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"3.3A (Tc)","Gate Charge (Qg) @ Vgs":"8.2nC @ 10V","Product Photos":"TO-220AB","PCN Assembly/Origin":"PCN-SIL-0102014 Rev 0 23/May/2014","Rds On (Max) @ Id, Vgs":"1.5 Ohm @ 2A, 10V","Datasheets":"IRF610PBF Packaging Information","FET Type":"MOSFET N-Channel, Me...
1903 Bytes - 01:56:35, 17 November 2024
Vishay_pcs/IRF610PBF
{"Category":"Power MOSFET","Dimensions":"10.51 x 4.65 x 15.49 mm","Maximum Continuous Drain Current":"3.3 A","Width":"4.65 mm","Maximum Drain Source Voltage":"200 V","Package Type":"TO-220AB","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 8.2 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"8.2 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"140 pF @ 25 V",...
1932 Bytes - 01:56:35, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRG7PH30K10PBF.pdf | 0.32 | 1 | Request |
