Product Datasheet Search Results:
10 Pages, 302 KB, Original- AUIRF5210STRL
- Infineon Technologies Ag
- Trans MOSFET P-CH Si 100V 38A Automotive 3-Pin(2+Tab) D2PAK T/R
11 Pages, 171 KB, Original- IRF5210STRL
- Infineon Technologies Ag
- Trans MOSFET P-CH Si 100V 40A 3-Pin(2+Tab) D2PAK T/R
11 Pages, 171 KB, Original- IRF5210STRLHR
- Infineon Technologies Ag
- Trans MOSFET P-CH Si 100V 40A 3-Pin(2+Tab)
10 Pages, 313 KB, Original- IRF5210STRLPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R
11 Pages, 295 KB, Original- AUIRF5210STRL
- International Rectifier
- MOSFET Automotive MOSFET P 38A 150nC D2Pak
10 Pages, 313 KB, Original- IRF5210STRL
- International Rectifier
- 38 A, 100 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
11 Pages, 171 KB, Original- IRF5210STRLHR
- International Rectifier
- 40 A, 100 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET
10 Pages, 313 KB, Original- IRF5210STRLPBF
- International Rectifier
- MOSFET P-CH 100V 38A D2PAK - IRF5210STRLPBF
Product Details Search Results:
Infineon.com/AUIRF5210STRL
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"38(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.1(W)","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1573 Bytes - 18:46:06, 17 November 2024
Infineon.com/IRF5210STRL
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"40(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1508 Bytes - 18:46:06, 17 November 2024
Infineon.com/IRF5210STRLHR
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"40(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1505 Bytes - 18:46:06, 17 November 2024
Infineon.com/IRF5210STRLPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"38(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.1(W)","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1538 Bytes - 18:46:06, 17 November 2024
Irf.com/AUIRF5210STRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"38A (Tc)","Gate Charge (Qg) @ Vgs":"230nC @ 10V","Product Photos":"TO-263","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"60 mOhm @ 38A, 10V","Datasheets":"AUIRF5210S","FET Type":"MOSFET P-Channel, Metal Oxide","PCN Packaging":"...
1796 Bytes - 18:46:06, 17 November 2024
Irf.com/IRF5210STRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.1 W","Avalanche Energy Rating (Eas)":"120 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"P-CHANNEL","FET Te...
1572 Bytes - 18:46:06, 17 November 2024
Irf.com/IRF5210STRLHR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"780 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"40 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"P-CHANNEL","FET Te...
1573 Bytes - 18:46:06, 17 November 2024
Irf.com/IRF5210STRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"38A (Tc)","Gate Charge (Qg) @ Vgs":"230nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"D2PAK Additional Assembly Site 17/Dec/2013 Additional Assembly Site 19/Mar/2014 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers...
2180 Bytes - 18:46:06, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF5210S.pdf | 0.18 | 1 | Request |
