Product Datasheet Search Results:

IRF520NPBF.pdf9 Pages, 175 KB, Original
IRF520NPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 100V 9.7A 3-Pin(3+Tab) TO-220AB Tube
IRF520NSTRLPBF.pdf11 Pages, 411 KB, Original
IRF520NSTRLPBF
Infineon Technologies Ag
Trans MOSFET N-CH 100V 9.7A 3-Pin(2+Tab) D2PAK T/R
IRF520N.pdf9 Pages, 120 KB, Original
IRF520N
International Rectifier
MOSFET N-CH 100V 9.7A TO-220AB - IRF520N
IRF520N-002.pdf1 Pages, 35 KB, Scan
IRF520N-002
International Rectifier
9.5 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF520N-002PBF.pdf1 Pages, 35 KB, Scan
IRF520N-002PBF
International Rectifier
9.5 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF520N-003.pdf1 Pages, 35 KB, Scan
IRF520N-003
International Rectifier
9.5 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF520N-003PBF.pdf1 Pages, 35 KB, Scan
IRF520N-003PBF
International Rectifier
9.5 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF520N-004.pdf1 Pages, 35 KB, Scan
IRF520N-004
International Rectifier
9.5 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF520N-004PBF.pdf1 Pages, 35 KB, Scan
IRF520N-004PBF
International Rectifier
9.5 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF520N-005.pdf1 Pages, 35 KB, Scan
IRF520N-005
International Rectifier
9.5 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF520N-005PBF.pdf1 Pages, 35 KB, Scan
IRF520N-005PBF
International Rectifier
9.5 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF520N-006.pdf1 Pages, 35 KB, Scan
IRF520N-006
International Rectifier
9.5 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Product Details Search Results:

Infineon.com/IRF520NPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"9.7(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"48(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1527 Bytes - 01:53:28, 15 November 2024
Infineon.com/IRF520NSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"9.7(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1528 Bytes - 01:53:28, 15 November 2024
Irf.com/IRF520N
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRF520N Saber Model IRF520N Spice Model","Product Photos":"TO-220AB PKG","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IRF520N","Rds On (Max) @ Id, Vgs":"200 mOhm @ 5.7A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"48W","Other Names":"*IRF520N","Package / Case":"TO-...
1613 Bytes - 01:53:28, 15 November 2024
Irf.com/IRF520N-002
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"9.5 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":...
1378 Bytes - 01:53:28, 15 November 2024
Irf.com/IRF520N-002PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor A...
1445 Bytes - 01:53:28, 15 November 2024
Irf.com/IRF520N-003
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"9.5 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":...
1375 Bytes - 01:53:28, 15 November 2024
Irf.com/IRF520N-003PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor A...
1445 Bytes - 01:53:28, 15 November 2024
Irf.com/IRF520N-004
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"9.5 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":...
1376 Bytes - 01:53:28, 15 November 2024
Irf.com/IRF520N-004PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor A...
1445 Bytes - 01:53:28, 15 November 2024
Irf.com/IRF520N-005
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"9.5 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":...
1377 Bytes - 01:53:28, 15 November 2024
Irf.com/IRF520N-005PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor A...
1445 Bytes - 01:53:28, 15 November 2024
Irf.com/IRF520N-006
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"9.5 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":...
1376 Bytes - 01:53:28, 15 November 2024

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