Product Datasheet Search Results:
5 Pages, 153 KB, Scan- IRF511
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 5.5 A, 60-100V
4 Pages, 200 KB, Original- IRF511
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF511
- Frederick Components
- Power MOSFET Selection Guide
5 Pages, 168 KB, Scan- IRF511
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 4.0A.
2 Pages, 127 KB, Scan- IRF511
- General Electric
- Power Transistor Data Book 1985
5 Pages, 179 KB, Scan- IRF511
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 195 KB, Scan- IRF511R
- Harris Semiconductor
- Power MOSFET Data Book 1990
1 Pages, 44 KB, Original- IRF511
- International Rectifier
- TO-220 N-Channel HEXFET Power MOSFET
1 Pages, 29 KB, Original- IRF511
- National Semiconductor
- N-Channel Power MOSFETs
Product Details Search Results:
Various/IRF511R
{"C(iss) Max. (F)":"150p","Absolute Max. Power Diss. (W)":"43","g(fs) Max, (S) Trans. conduct,":"2.0","I(D) Abs. Max.(A) Drain Curr.":"4.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"21n","r(DS)on Max. (Ohms)":"540m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"20","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"1.3","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.4","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pack...
1295 Bytes - 23:45:02, 18 November 2024
