Product Datasheet Search Results:
- IRF440
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 8A, 450 V/500V
- IRF440-443
- Fairchild Semiconductor
- N-Channel Power MOSFETs 8A 450 V/500V
- IRF440
- Fci Semiconductor
- POWER MOSFETs
- IRF440
- Frederick Components
- Power MOSFET Selection Guide
- IRF440
- Motorola / Freescale Semiconductor
- TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
- IRF440
- General Electric
- Power Transistor Data Book 1985
- IRF440
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRF440R
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRF440
- Infineon Technologies Ag
- Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) TO-3
- IRF440
- Intersil Corporation
- 8A, 500V, 0.850 ?, N-Channel Power MOSFET
- IRF440
- International Rectifier
- 8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
- IRF440E
- International Rectifier
- 8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Product Details Search Results:
Infineon.com/IRF440
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"125(W)","Continuous Drain Current":"8(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-3","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1436 Bytes - 15:48:34, 15 November 2024
Irf.com/IRF440
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1484 Bytes - 15:48:34, 15 November 2024
Irf.com/IRF440E
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1420 Bytes - 15:48:34, 15 November 2024
Irf.com/IRF440EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1428 Bytes - 15:48:34, 15 November 2024
Irf.com/IRF440EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1493 Bytes - 15:48:34, 15 November 2024
Irf.com/IRF440EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1428 Bytes - 15:48:34, 15 November 2024
Irf.com/IRF440EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1495 Bytes - 15:48:34, 15 November 2024
Irf.com/IRF440EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1428 Bytes - 15:48:34, 15 November 2024
Irf.com/IRF440ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1495 Bytes - 15:48:34, 15 November 2024
Irf.com/IRF440ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1428 Bytes - 15:48:34, 15 November 2024
Irf.com/IRF440EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1495 Bytes - 15:48:34, 15 November 2024
Irf.com/IRF440EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1489 Bytes - 15:48:34, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
IRF4104S.pdf | 0.27 | 1 | Request | |
IRF4905.pdf | 0.65 | 1 | Request | |
IRF4905S.pdf | 0.14 | 1 | Request | |
IRF4104.pdf | 0.27 | 1 | Request | |
IRF4905L.pdf | 0.14 | 1 | Request |