Product Datasheet Search Results:

IRF440.pdf5 Pages, 151 KB, Scan
IRF440
Fairchild Semiconductor
N-Channel Power MOSFETs, 8A, 450 V/500V
IRF440-443.pdf5 Pages, 151 KB, Scan
IRF440-443
Fairchild Semiconductor
N-Channel Power MOSFETs 8A 450 V/500V
IRF440.pdf4 Pages, 200 KB, Original
IRF440
Fci Semiconductor
POWER MOSFETs
IRF440.pdf4 Pages, 200 KB, Original
IRF440
Frederick Components
Power MOSFET Selection Guide
IRF440.pdf19 Pages, 625 KB, Original
IRF440
Motorola / Freescale Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
IRF440.pdf2 Pages, 127 KB, Scan
IRF440
General Electric
Power Transistor Data Book 1985
IRF440.pdf5 Pages, 206 KB, Scan
IRF440
Harris Semiconductor
Power MOSFET Data Book 1990
IRF440R.pdf5 Pages, 195 KB, Scan
IRF440R
Harris Semiconductor
Power MOSFET Data Book 1990
IRF440.pdf7 Pages, 567 KB, Original
IRF440
Infineon Technologies Ag
Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) TO-3
IRF440.pdf7 Pages, 56 KB, Original
IRF440
Intersil Corporation
8A, 500V, 0.850 ?, N-Channel Power MOSFET
IRF440.pdf7 Pages, 142 KB, Original
IRF440
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440E.pdf92 Pages, 2885 KB, Scan
IRF440E
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440EA.pdf92 Pages, 2885 KB, Scan
IRF440EA
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440EAPBF.pdf92 Pages, 2885 KB, Scan
IRF440EAPBF
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440EB.pdf92 Pages, 2885 KB, Scan
IRF440EB
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440EBPBF.pdf92 Pages, 2885 KB, Scan
IRF440EBPBF
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440EC.pdf92 Pages, 2885 KB, Scan
IRF440EC
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440ECPBF.pdf92 Pages, 2885 KB, Scan
IRF440ECPBF
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440ED.pdf92 Pages, 2885 KB, Scan
IRF440ED
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440EDPBF.pdf92 Pages, 2885 KB, Scan
IRF440EDPBF
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440EPBF.pdf92 Pages, 2885 KB, Scan
IRF440EPBF
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440PBF.pdf7 Pages, 142 KB, Original
IRF440PBF
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440R.pdf1 Pages, 48 KB, Original
IRF440R
International Rectifier
Rugged Series Power MOSFETs - N-Channel
IRF440.pdf4 Pages, 220 KB, Scan
IRF440
N/a
FET Data Book
IRF440R.pdf1 Pages, 83 KB, Scan
IRF440R
N/a
Shortform Datasheet & Cross References Data
IRF440.pdf1 Pages, 31 KB, Original
IRF440
National Semiconductor
N-Channel Power MOSFETs
IRF440.pdf5 Pages, 212 KB, Scan
IRF440
Samsung Electronics
N-CHANNEL POWER MOSFETS
IRF440.pdf1 Pages, 62 KB, Scan
IRF440
Semelab Plc.
8 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
IRF440-JQR-B.pdf1 Pages, 62 KB, Scan
IRF440-JQR-B
Semelab Plc.
8 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
IRF440-JQR-BR1.pdf1 Pages, 62 KB, Scan
IRF440-JQR-BR1
Semelab Plc.
8 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
IRF440-QR-B.pdf1 Pages, 62 KB, Scan
IRF440-QR-B
Semelab Plc.
8 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
IRF440-QR-BR1.pdf1 Pages, 62 KB, Scan
IRF440-QR-BR1
Semelab Plc.
8 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
IRF440R1.pdf1 Pages, 62 KB, Scan
IRF440R1
Semelab Plc.
8 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
IRF440SMD-JQR-B.pdf1 Pages, 62 KB, Scan
IRF440SMD-JQR-B
Semelab Plc.
8 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
IRF440.pdf4 Pages, 138 KB, Scan
IRF440
Siliconix
MOSPOWER Design Data Book 1983

Product Details Search Results:

Infineon.com/IRF440
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"125(W)","Continuous Drain Current":"8(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-3","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1436 Bytes - 22:39:56, 19 September 2024
Irf.com/IRF440
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1484 Bytes - 22:39:56, 19 September 2024
Irf.com/IRF440E
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1420 Bytes - 22:39:56, 19 September 2024
Irf.com/IRF440EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1428 Bytes - 22:39:56, 19 September 2024
Irf.com/IRF440EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1493 Bytes - 22:39:56, 19 September 2024
Irf.com/IRF440EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1428 Bytes - 22:39:56, 19 September 2024
Irf.com/IRF440EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1495 Bytes - 22:39:56, 19 September 2024
Irf.com/IRF440EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1428 Bytes - 22:39:56, 19 September 2024
Irf.com/IRF440ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1495 Bytes - 22:39:56, 19 September 2024
Irf.com/IRF440ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1428 Bytes - 22:39:56, 19 September 2024
Irf.com/IRF440EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1495 Bytes - 22:39:56, 19 September 2024
Irf.com/IRF440EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1489 Bytes - 22:39:56, 19 September 2024
Irf.com/IRF440PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1549 Bytes - 22:39:56, 19 September 2024
Semelab.co.uk/IRF440
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.8 ohm","Number of Terminals":"2","DS Br...
1234 Bytes - 22:39:56, 19 September 2024
Semelab.co.uk/IRF440-JQR-B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.8 ohm","Number of Terminals":"2","DS Br...
1273 Bytes - 22:39:56, 19 September 2024
Semelab.co.uk/IRF440-JQR-BR1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance...
1329 Bytes - 22:39:56, 19 September 2024
Semelab.co.uk/IRF440-QR-B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.8 ohm","Number of Terminals":"2","DS Br...
1267 Bytes - 22:39:56, 19 September 2024
Semelab.co.uk/IRF440-QR-BR1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance...
1327 Bytes - 22:39:56, 19 September 2024
Semelab.co.uk/IRF440R1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance...
1296 Bytes - 22:39:56, 19 September 2024
Semelab.co.uk/IRF440SMD-JQR-B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.8 ohm","Number of Terminals":"2","DS Br...
1291 Bytes - 22:39:56, 19 September 2024
Various/IRF440R
{"C(iss) Max. (F)":"1.2n","Absolute Max. Power Diss. (W)":"125","g(fs) Max, (S) Trans. conduct,":"7.5","I(D) Abs. Max.(A) Drain Curr.":"5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"74n","r(DS)on Max. (Ohms)":"850m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"32","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.9","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"4.4","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packa...
1294 Bytes - 22:39:56, 19 September 2024
Vishay.com/IRF440CHP
{"Military":"N","r(DS)on Max. (Ohms)":"850m","V(BR)DSS (V)":"500","Package":"Chip"}...
596 Bytes - 22:39:56, 19 September 2024