Product Datasheet Search Results:

IRF350E.pdf92 Pages, 2885 KB, Scan
IRF350E
International Rectifier
14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF350EA.pdf92 Pages, 2885 KB, Scan
IRF350EA
International Rectifier
14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF350EAPBF.pdf92 Pages, 2885 KB, Scan
IRF350EAPBF
International Rectifier
14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF350EB.pdf92 Pages, 2885 KB, Scan
IRF350EB
International Rectifier
14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF350EBPBF.pdf92 Pages, 2885 KB, Scan
IRF350EBPBF
International Rectifier
14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF350EC.pdf92 Pages, 2885 KB, Scan
IRF350EC
International Rectifier
14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF350ECPBF.pdf92 Pages, 2885 KB, Scan
IRF350ECPBF
International Rectifier
14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF350ED.pdf92 Pages, 2885 KB, Scan
IRF350ED
International Rectifier
14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF350EDPBF.pdf92 Pages, 2885 KB, Scan
IRF350EDPBF
International Rectifier
14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF350EPBF.pdf92 Pages, 2885 KB, Scan
IRF350EPBF
International Rectifier
14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Product Details Search Results:

Irf.com/IRF350E
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1423 Bytes - 00:51:36, 15 November 2024
Irf.com/IRF350EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1428 Bytes - 00:51:36, 15 November 2024
Irf.com/IRF350EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"M...
1497 Bytes - 00:51:36, 15 November 2024
Irf.com/IRF350EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1429 Bytes - 00:51:36, 15 November 2024
Irf.com/IRF350EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"M...
1497 Bytes - 00:51:36, 15 November 2024
Irf.com/IRF350EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1428 Bytes - 00:51:36, 15 November 2024
Irf.com/IRF350ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"M...
1491 Bytes - 00:51:36, 15 November 2024
Irf.com/IRF350ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1430 Bytes - 00:51:36, 15 November 2024
Irf.com/IRF350EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"M...
1495 Bytes - 00:51:36, 15 November 2024
Irf.com/IRF350EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"M...
1488 Bytes - 00:51:36, 15 November 2024

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