Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"43(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"150(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"590 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"43 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0420 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"150 A","Channel Type":"N-CHANNEL","FET Te...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"43A (Tc)","Gate Charge (Qg) @ Vgs":"200nC @ 10V","Product Photos":"TO-263","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"42 mOhm @ 22A, 10V","Datasheets":"IRF3415S(LPbF)","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packagin...

{"Category":"MOSFET","Maximum Drain Source Voltage":"150 V","Typical Rise Time":"55 ns","Typical Turn-Off Delay Time":"71 ns","Description":"Value","Maximum Continuous Drain Current":"43 A","Package":"3D2PAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"12 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"42@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"69 ns"}...