Product Datasheet Search Results:

IRF340E.pdf92 Pages, 2885 KB, Scan
IRF340E
International Rectifier
10 A, 400 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF340EA.pdf92 Pages, 2885 KB, Scan
IRF340EA
International Rectifier
10 A, 400 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF340EAPBF.pdf92 Pages, 2885 KB, Scan
IRF340EAPBF
International Rectifier
10 A, 400 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF340EB.pdf92 Pages, 2885 KB, Scan
IRF340EB
International Rectifier
10 A, 400 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF340EBPBF.pdf92 Pages, 2885 KB, Scan
IRF340EBPBF
International Rectifier
10 A, 400 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF340EC.pdf92 Pages, 2885 KB, Scan
IRF340EC
International Rectifier
10 A, 400 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF340ECPBF.pdf92 Pages, 2885 KB, Scan
IRF340ECPBF
International Rectifier
10 A, 400 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF340ED.pdf92 Pages, 2885 KB, Scan
IRF340ED
International Rectifier
10 A, 400 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF340EDPBF.pdf92 Pages, 2885 KB, Scan
IRF340EDPBF
International Rectifier
10 A, 400 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF340EPBF.pdf92 Pages, 2885 KB, Scan
IRF340EPBF
International Rectifier
10 A, 400 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Product Details Search Results:

Irf.com/IRF340E
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"5.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1422 Bytes - 12:37:55, 01 November 2024
Irf.com/IRF340EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"5.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1428 Bytes - 12:37:55, 01 November 2024
Irf.com/IRF340EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"5.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1495 Bytes - 12:37:55, 01 November 2024
Irf.com/IRF340EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"5.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1430 Bytes - 12:37:55, 01 November 2024
Irf.com/IRF340EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"5.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1494 Bytes - 12:37:55, 01 November 2024
Irf.com/IRF340EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"5.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1428 Bytes - 12:37:55, 01 November 2024
Irf.com/IRF340ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"5.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1495 Bytes - 12:37:55, 01 November 2024
Irf.com/IRF340ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"5.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1428 Bytes - 12:37:55, 01 November 2024
Irf.com/IRF340EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"5.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1495 Bytes - 12:37:55, 01 November 2024
Irf.com/IRF340EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"5.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1487 Bytes - 12:37:55, 01 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
IRF3415S.pdf0.151Request
IRF3415.pdf0.251Request
IRF3415L.pdf0.151Request