Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"21(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"150(V)","Packaging":"Rail/Tube","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"23(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"150(V)","Packaging":"Rail/Tube","Power Dissipation":"94(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"3.8(W)","Continuous Drain Current":"21(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"150(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"21(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"150(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Supplier Device Package":"D2PAK","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF3315S","Rds On (Max) @ Id, Vgs":"82 mOhm @ 12A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Ma...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Supplier Device Package":"D2PAK","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF3315S","Rds On (Max) @ Id, Vgs":"82 mOhm @ 12A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)"...

{"Factory Pack Quantity":"800","Vds - Drain-Source Breakdown Voltage":"150 V","Transistor Polarity":"N-Channel","Rds On - Drain-Source Resistance":"82 mOhms","Brand":"International Rectifier","Id - Continuous Drain Current":"21 A","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"3.8 W","Packaging":"Reel","Product Category":"MOSFET","Qg - Gate Charge":"95 nC","Package / Case":"D-PAK-3","Maximum Operating Temperature":"+ 175 C","RoHS":"Details","Manufacturer":"International Rectifier"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Rds On (Max) @ Id, Vgs":"-","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"-","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drain to Source Voltage (Vdss)":"150V","Current - Continuous Drain (Id) @...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRF3315 Saber Model IRF3315 Spice Model","Product Photos":"TO-220AB PKG","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IRF3315","Rds On (Max) @ Id, Vgs":"70 mOhm @ 12A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"136W","Other Names":"*IRF3315","Package / Case":"TO-2...

{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"21 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0820 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"150 V","Transistor Ap...

{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"21 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"...