Product Datasheet Search Results:

AUIRF3205ZS.pdf12 Pages, 705 KB, Original
AUIRF3205ZS
Infineon Technologies Ag
Trans MOSFET N-CH Si 55V 110A Automotive 3-Pin(2+Tab) D2PAK Tube
AUIRF3205ZSTRL.pdf12 Pages, 705 KB, Original
AUIRF3205ZSTRL
Infineon Technologies Ag
Trans MOSFET N-CH Si 55V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
IRF3205ZSTRLPBF.pdf12 Pages, 382 KB, Original
IRF3205ZSTRLPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK T/R
AUIRF3205ZS.pdf14 Pages, 332 KB, Original
AUIRF3205ZS
International Rectifier
MOSFET N-CH 55V 75A D2PAK - AUIRF3205ZS
AUIRF3205ZSTRL.pdf14 Pages, 332 KB, Original
AUIRF3205ZSTRL
International Rectifier
MOSFET N-CH 55V 75A D2PAK - AUIRF3205ZSTRL
AUIRF3205ZSTRR.pdf14 Pages, 332 KB, Original
AUIRF3205ZSTRR
International Rectifier
MOSFET N-CH 55V 75A D2PAK - AUIRF3205ZSTRR
IRF3205ZS.pdf13 Pages, 312 KB, Original
IRF3205ZS
International Rectifier
MOSFET N-CH 55V 75A D2PAK - IRF3205ZS
IRF3205ZSPBF.pdf12 Pages, 382 KB, Original
IRF3205ZSPBF
International Rectifier
MOSFET N-CH 55V 75A D2PAK - IRF3205ZSPBF
IRF3205ZSTRL.pdf12 Pages, 382 KB, Original
IRF3205ZSTRL
International Rectifier
75 A, 55 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
IRF3205ZSTRLPBF.pdf12 Pages, 382 KB, Original
IRF3205ZSTRLPBF
International Rectifier
MOSFET N-CH 55V 75A D2PAK - IRF3205ZSTRLPBF
IRF3205ZSTRR.pdf12 Pages, 382 KB, Original
IRF3205ZSTRR
International Rectifier
75 A, 55 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
IRF3205ZSTRRPBF.pdf12 Pages, 382 KB, Original
IRF3205ZSTRRPBF
International Rectifier
MOSFET N-CH 55V 75A D2PAK - IRF3205ZSTRRPBF

Product Details Search Results:

Infineon.com/AUIRF3205ZS
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"170(W)","Continuous Drain Current":"110(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1553 Bytes - 15:31:39, 01 November 2024
Infineon.com/AUIRF3205ZSTRL
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"170(W)","Continuous Drain Current":"110(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1567 Bytes - 15:31:39, 01 November 2024
Infineon.com/IRF3205ZSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"170(W)","Continuous Drain Current":"110(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1542 Bytes - 15:31:39, 01 November 2024
Irf.com/AUIRF3205ZS
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"6.5 mOhm @ 66A, 10V","Datasheets":"AUIRF3...
1801 Bytes - 15:31:39, 01 November 2024
Irf.com/AUIRF3205ZSTRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"6.5 mOhm @ 66A, 10V","Datasheets":"AUIRF3...
2035 Bytes - 15:31:39, 01 November 2024
Irf.com/AUIRF3205ZSTRR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0065 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"440 A","Channel Type":"N-CHAN...
1626 Bytes - 15:31:39, 01 November 2024
Irf.com/IRF3205ZS
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"3450pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"D2PAK","Datasheets":"IRF3205Z(S,L)","Rds On (Max) @ Id, Vgs":"6.5 mOhm @ 66A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"170W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263...
1614 Bytes - 15:31:39, 01 November 2024
Irf.com/IRF3205ZSPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Alternate Assembly Site 11/Nov/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"6.5 mOhm @ ...
1882 Bytes - 15:31:39, 01 November 2024
Irf.com/IRF3205ZSTRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0065 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"440 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1545 Bytes - 15:31:39, 01 November 2024
Irf.com/IRF3205ZSTRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Alternate Assembly Site 11/Nov/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds O...
2117 Bytes - 15:31:39, 01 November 2024
Irf.com/IRF3205ZSTRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0065 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"440 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1545 Bytes - 15:31:39, 01 November 2024
Irf.com/IRF3205ZSTRRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Alternate Assembly Site 11/Nov/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"6.5 mOhm @ ...
1889 Bytes - 15:31:39, 01 November 2024

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