Product Datasheet Search Results:

IRF250EC.pdf92 Pages, 2885 KB, Scan
IRF250EC
International Rectifier
30 A, 200 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF250ECPBF.pdf92 Pages, 2885 KB, Scan
IRF250ECPBF
International Rectifier
30 A, 200 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

Product Details Search Results:

Irf.com/IRF250EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"200 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1431 Bytes - 19:58:17, 23 March 2025
Irf.com/IRF250ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"200 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"M...
1498 Bytes - 19:58:17, 23 March 2025

Documentation and Support

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