Product Datasheet Search Results:

IRF230E.pdf92 Pages, 2885 KB, Scan
IRF230E
International Rectifier
9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF230EA.pdf92 Pages, 2885 KB, Scan
IRF230EA
International Rectifier
9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF230EAPBF.pdf92 Pages, 2885 KB, Scan
IRF230EAPBF
International Rectifier
9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF230EB.pdf92 Pages, 2885 KB, Scan
IRF230EB
International Rectifier
9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF230EBPBF.pdf92 Pages, 2885 KB, Scan
IRF230EBPBF
International Rectifier
9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF230EC.pdf92 Pages, 2885 KB, Scan
IRF230EC
International Rectifier
9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF230ECPBF.pdf92 Pages, 2885 KB, Scan
IRF230ECPBF
International Rectifier
9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF230ED.pdf92 Pages, 2885 KB, Scan
IRF230ED
International Rectifier
9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF230EDPBF.pdf92 Pages, 2885 KB, Scan
IRF230EDPBF
International Rectifier
9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF230EPBF.pdf92 Pages, 2885 KB, Scan
IRF230EPBF
International Rectifier
9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Product Details Search Results:

Irf.com/IRF230E
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1421 Bytes - 01:44:32, 15 November 2024
Irf.com/IRF230EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1427 Bytes - 01:44:32, 15 November 2024
Irf.com/IRF230EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1491 Bytes - 01:44:32, 15 November 2024
Irf.com/IRF230EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1427 Bytes - 01:44:32, 15 November 2024
Irf.com/IRF230EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1493 Bytes - 01:44:32, 15 November 2024
Irf.com/IRF230EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1427 Bytes - 01:44:32, 15 November 2024
Irf.com/IRF230ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1494 Bytes - 01:44:32, 15 November 2024
Irf.com/IRF230ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1425 Bytes - 01:44:32, 15 November 2024
Irf.com/IRF230EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1490 Bytes - 01:44:32, 15 November 2024
Irf.com/IRF230EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1486 Bytes - 01:44:32, 15 November 2024

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