Product Datasheet Search Results:

IRF220E.pdf11 Pages, 324 KB, Scan
IRF220E
International Rectifier
200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF220EA.pdf11 Pages, 324 KB, Scan
IRF220EA
International Rectifier
200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF220EAPBF.pdf11 Pages, 324 KB, Scan
IRF220EAPBF
International Rectifier
200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF220EB.pdf11 Pages, 324 KB, Scan
IRF220EB
International Rectifier
200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF220EBPBF.pdf11 Pages, 324 KB, Scan
IRF220EBPBF
International Rectifier
200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF220EC.pdf11 Pages, 324 KB, Scan
IRF220EC
International Rectifier
200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF220ECPBF.pdf11 Pages, 324 KB, Scan
IRF220ECPBF
International Rectifier
200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF220ED.pdf11 Pages, 324 KB, Scan
IRF220ED
International Rectifier
200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF220EDPBF.pdf11 Pages, 324 KB, Scan
IRF220EDPBF
International Rectifier
200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF220EPBF.pdf11 Pages, 324 KB, Scan
IRF220EPBF
International Rectifier
200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Product Details Search Results:

Irf.com/IRF220E
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.8000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","DS Breakdown Voltage-Min":"200 V","Numb...
1219 Bytes - 06:02:10, 29 April 2025
Irf.com/IRF220EA
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.8000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","DS Breakdown Voltage-Min":"200 V","Numb...
1225 Bytes - 06:02:10, 29 April 2025
Irf.com/IRF220EAPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.8000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Termin...
1292 Bytes - 06:02:10, 29 April 2025
Irf.com/IRF220EB
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.8000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","DS Breakdown Voltage-Min":"200 V","Numb...
1226 Bytes - 06:02:10, 29 April 2025
Irf.com/IRF220EBPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.8000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Termin...
1293 Bytes - 06:02:10, 29 April 2025
Irf.com/IRF220EC
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.8000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","DS Breakdown Voltage-Min":"200 V","Numb...
1227 Bytes - 06:02:10, 29 April 2025
Irf.com/IRF220ECPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.8000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Termin...
1292 Bytes - 06:02:10, 29 April 2025
Irf.com/IRF220ED
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.8000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","DS Breakdown Voltage-Min":"200 V","Numb...
1224 Bytes - 06:02:10, 29 April 2025
Irf.com/IRF220EDPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.8000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Termin...
1294 Bytes - 06:02:10, 29 April 2025
Irf.com/IRF220EPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.8000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Termin...
1285 Bytes - 06:02:10, 29 April 2025

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
IRF2204.pdf0.141Request
IRF2204L.pdf0.221Request
IRF2204S.pdf0.221Request