Product Datasheet Search Results:

IPS110N12N3G.pdf10 Pages, 770 KB, Original
IPS110N12N3G
Infineon Technologies Ag
75 A, 120 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
IPS110N12N3GBKMA1.pdf12 Pages, 585 KB, Original

Product Details Search Results:

Infineon.com/IPS110N12N3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"120 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0110 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"300 A","Channel Type":"N-CHANNEL",...
1558 Bytes - 22:29:15, 18 October 2024
Infineon.com/IPS110N12N3GBKMA1
{"Factory Pack Quantity":"1500","Vds - Drain-Source Breakdown Voltage":"120 V","Transistor Polarity":"N-Channel","Tradename":"OptiMOS","Series":"IPS110N12","Brand":"Infineon Technologies","Id - Continuous Drain Current":"75 A","Packaging":"Tube","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"11 mOhms","Package / Case":"TO-251-3","Part # Aliases":"SP000674456","RoHS":"Details","Manufacturer":"Infineon"}...
1461 Bytes - 22:29:15, 18 October 2024

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