Product Datasheet Search Results:

IPP030N10N3G.pdf10 Pages, 535 KB, Original
IPP030N10N3G
Infineon Technologies Ag
100 A, 100 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IPP030N10N3GHKSA1.pdf10 Pages, 535 KB, Original
IPP030N10N3GHKSA1
Infineon Technologies
Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 Tube
IPP030N10N3GXKSA1.pdf11 Pages, 537 KB, Original

Product Details Search Results:

Infineon.com/IPP030N10N3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"100 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0030 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL...
1568 Bytes - 22:31:15, 25 November 2024
Infineon.com/IPP030N10N3GHKSA1
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"58 ns","Typical Turn-Off Delay Time":"84 ns","Description":"Value","Maximum Continuous Drain Current":"100 A","Package":"3TO-220","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"34 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"3@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"28 ns"}...
1556 Bytes - 22:31:15, 25 November 2024
Infineon.com/IPP030N10N3GXKSA1
{"Factory Pack Quantity":"500","Vds - Drain-Source Breakdown Voltage":"100 V","Transistor Polarity":"N-Channel","Tradename":"OptiMOS","Series":"IPP030N10","Brand":"Infineon Technologies","Id - Continuous Drain Current":"100 A","Packaging":"Tube","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"3 mOhms","Package / Case":"TO-220-3","Part # Aliases":"SP000680768","RoHS":"Details","Manufacturer":"Infineon"}...
1483 Bytes - 22:31:15, 25 November 2024

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