Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"120 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0110 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"300 A","Channel Type":"N-CHANNEL","FE...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 83\u00b5A (Typ)","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"65nC @ 10V","Product Photos":"TO252-3","Rds On (Max) @ Id, Vgs":"11 mOhm @ 75A, 10V","Datasheets":"IPx110N12N3 G","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015","Dra...

{"Category":"MOSFET","Maximum Drain Source Voltage":"120 V","Typical Turn-Off Delay Time":"24 ns","Description":"Value","Maximum Continuous Drain Current":"75 A","Package":"3TO-252","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"16 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"11@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"8 ns"}...