Product Datasheet Search Results:
- IPB120P04P4-04
- Infineon Technologies Ag
- 120 A, 40 V, 0.0035 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
Product Details Search Results:
Infineon.com/IPB120P04P4-04
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"78 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"120 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0035 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"480 A","Channel Type":"P-CHANNEL","FE...
1586 Bytes - 10:35:16, 18 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
IPB120P04P4-04.pdf | 0.20 | 1 | Request |