Product Datasheet Search Results:
9 Pages, 632 KB, Original- IPB036N12N3G
- Infineon Technologies Ag
- 180 A, 120 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
10 Pages, 633 KB, Original- IPB036N12N3GATMA1
- Infineon Technologies
- MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
Product Details Search Results:
Infineon.com/IPB036N12N3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"900 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"180 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0036 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"720 A","Channel Type":"N-CHANNEL","F...
1610 Bytes - 16:53:40, 18 October 2024
Infineon.com/IPB036N12N3GATMA1
{"Product Category":"MOSFET","Series":"XPB036N12","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1110 Bytes - 16:53:40, 18 October 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPB036N12N3G.pdf | 0.62 | 1 | Request |
