Product Datasheet Search Results:

HSG2001.pdf25 Pages, 168 KB, Original
HSG2001
Renesas Technology / Hitachi Semiconductor
SiGe NPN Epitaxial High Frequency Medium Power Amplifier
HSG2001VF.pdf25 Pages, 168 KB, Original
HSG2001VF-E.pdf25 Pages, 168 KB, Original

Product Details Search Results:

Microsemi.com/SG2001DW
{"Input Logic Family":"C/PMOS,D/T","Logic Funct.":"Inverting","Package":"SO","Output Config":"Open-Coll","P(D) Max.(W) Power Dissipation":"2.0","VOH Max.":"50","Military":"N","Pins":"16","t(PLH) Maximum (S)":"1.0u","@Iol (A)":"350m","Technology":"Bipolar","Outp Transis. Ion Max.":"500m","V(OL)Max.(V)Lo Level Out.Volt.":"1.6"}...
830 Bytes - 05:28:52, 05 November 2024
Microsemi.com/SG2001J
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-16","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","DC Current Gain-Min (hFE)":"1000","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Collector Current-Max (IC)":"0.5000 A","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configurat...
1311 Bytes - 05:28:52, 05 November 2024
Microsemi.com/SG2001J/883B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-16","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","DC Current Gain-Min (hFE)":"1000","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Collector Current-Max (IC)":"0.5000 A","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configurat...
1346 Bytes - 05:28:52, 05 November 2024
Microsemi.com/SG2001J/DESC
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","DC Current Gain-Min (hFE)":"1000","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.5000 A","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"7 BANKS, ...
1324 Bytes - 05:28:52, 05 November 2024
Microsemi.com/SG2001L
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-20","Terminal Form":"NO LEAD","Package Style":"CHIP CARRIER","DC Current Gain-Min (hFE)":"1000","Collector Current-Max (IC)":"0.5000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Number of Elements":"7","Transistor Element Material":"SILICON","Terminal Position":"QUAD","Transistor Polarity":"NPN","Package Shape":...
1330 Bytes - 05:28:52, 05 November 2024
Microsemi.com/SG2001L/883B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-20","Terminal Form":"NO LEAD","Package Style":"CHIP CARRIER","DC Current Gain-Min (hFE)":"1000","Collector Current-Max (IC)":"0.5000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Number of Elements":"7","Transistor Element Material":"SILICON","Terminal Position":"QUAD","Transistor Polarity":"NPN","Package Shape":...
1366 Bytes - 05:28:52, 05 November 2024
Microsemi.com/SG2001N
{"Input Logic Family":"C/PMOS,D/T","Logic Funct.":"Inverting","Package":"DIP","Output Config":"Open-Coll","P(D) Max.(W) Power Dissipation":"2.0","VOH Max.":"50","Military":"N","Pins":"16","t(PLH) Maximum (S)":"1.0u","@Iol (A)":"350m","Technology":"Bipolar","Outp Transis. Ion Max.":"500m","V(OL)Max.(V)Lo Level Out.Volt.":"1.6"}...
827 Bytes - 05:28:52, 05 November 2024
Various/SG2001A
{"P(O)rad Min.(W)Rad. Out. Power":"1.0","Semiconductor Material":"GaAs","Package":"Stud","t(resp) Max.(s) Response Time":"1.0n","Peak Wavelength (m)":"904n","@t(w) (s) (Test Condition)":"200n","Spectral Bandwidth (m)":"3.5n","@I(F) (A) (Test Condition)":"10","I(FP) Max.(A)Forward Pulse Cur":"10","Half-Intensity Beam Angle(Deg)":"9","V(F) Max.(V) Forward Voltage":"4"}...
826 Bytes - 05:28:52, 05 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
CYG2001.pdf0.031Request
9WFA0924G2001.pdf27.701Request
EG2001K.pdf0.061Request