Product Datasheet Search Results:
27 Pages, 173 KB, Original- HN58C257AT-10
- Renesas Technology / Hitachi Semiconductor
- 256k EEPROM (32 kWord x 8 Bit) Ready/Inverted Busy and Inverted RES Function
26 Pages, 280 KB, Original- HN58C257AT-10E
- Renesas Technology / Hitachi Semiconductor
- EEPROM; Capacity (bit): 256K; Organization (word): 32K; Organization (bit): x 8; Access time (ns): 100; Type: Parallel; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOP (32); Remarks: with reset function; Application: Consumer/Industrial
28 Pages, 302 KB, Original- HN58C257AT-10
- Renesas Electronics
- 32K X 8 EEPROM 5V, 100 ns, PDSO32
28 Pages, 302 KB, Original- HN58C257AT-10E
- Renesas Electronics
- 32K X 8 EEPROM 5V, 100 ns, PDSO32
Product Details Search Results:
Renesas.com/HN58C257AT-10
{"Terminal Finish":"TIN LEAD","Terminal Pitch":"0.5000 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"70 Cel","Number of Words Code":"32K","Write Cycle Time-Max (tWC)":"10 ms","Supply Voltage-Nom (Vsup)":"5 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"0.0 Cel","Number of Words":"32768 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory Density":"262144 deg","Supply...
1623 Bytes - 02:43:17, 17 November 2024
Renesas.com/HN58C257AT-10E
{"Terminal Finish":"NOT SPECIFIED","Terminal Pitch":"0.5000 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"70 Cel","Number of Words Code":"32K","Write Cycle Time-Max (tWC)":"10 ms","Supply Voltage-Nom (Vsup)":"5 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Lead Free":"Yes","Operating Temperature-Min":"0.0 Cel","Number of Words":"32768 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Access Time-Max (tACC)":"100 ns","Memory D...
1691 Bytes - 02:43:17, 17 November 2024
