Product Datasheet Search Results:
14 Pages, 121 KB, Original- H7N1004LD-E
- Renesas Electronics
- 30 A, 100 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/H7N1004LD-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1494 Bytes - 06:42:37, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IXFH7N100P.pdf | 0.17 | 1 | Request |
