Datasheet.Directory

{"Category":"Isolators","Vce Saturation (Max)":"1V","Operating Temperature":"-40\u00b0C ~ 100\u00b0C","Input Type":"DC","Package / Case":"6-SMD, Gull Wing","Current Transfer Ratio (Min)":"500% @ 1mA","Product Photos":"H11B1SM","Current Transfer Ratio (Max)":"-","Rise / Fall Time (Typ)":"-","Output Type":"Darlington with Base","Current - DC Forward (If) (Max)":"80mA","Datasheets":"4N29-30M,32-33M, H11B1M, TIL113M","Number of Channels":"1","Standard Package":"1,000","Voltage - Output (Max)":"30V","Current - O...

{"Category":"Isolators","Vce Saturation (Max)":"1V","Operating Temperature":"-55\u00b0C ~ 100\u00b0C","Input Type":"DC","Package / Case":"6-SMD, Gull Wing","Current Transfer Ratio (Min)":"500% @ 1mA","Product Photos":"H11L1SM","Current Transfer Ratio (Max)":"-","Rise / Fall Time (Typ)":"-","Output Type":"Darlington with Base","Current - DC Forward (If) (Max)":"80mA","Datasheets":"H11B1(X) - H11B3(X)","Number of Channels":"1","Standard Package":"1,300","Voltage - Output (Max)":"30V","Current - Output / Chann...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Mfr Package Description":"ROHS COMPLIANT, SURFACE MOUNT, PLASTIC, DIP-6","Operating Temperature-Min":"-55 Cel","Coll-emtr Bkdn Voltage-Min":"30 V","Current Transfer Ratio-Nom":"500 %","Operating Temperature-Max":"100 Cel","Number of Functions":"1","Optoelectronic Device Type":"DARLINGTON OUTPUT","Isolation Voltage-Max":"5300 V","EU RoHS Compliant":"Yes","Collector Dark Current-Max":"100 nA","Input Cont Forward Current-Max":"80 mA","Conf...

{"Output Device":"Darlington With Base","Isolation Voltage":"5300(V)","Power Dissipation":"0.25(W)","Reverse Breakdown Voltage":"3(V)","Mounting":"Surface Mount","Forward Current":"80(mA)","Operating Temp Range":"-55C to 100C","Output Type":"DC","Standard":"UL","Operating Temperature Classification":"Industrial","Forward Voltage":"1.5(V)","Package Type":"PDIP SMD","Rad Hardened":"No","Input Type":"DC","Maximum Forward Current":"80(mA)","Current Transfer Ratio":"500(%)","Pin Count":"6","Number of Elements":"...

{"Output Device":"Darlington With Base","Isolation Voltage":"5300(V)","Forward Current":"80(mA)","Reverse Breakdown Voltage":"3(V)","Mounting":"Surface Mount","Forward Voltage":"1.5(V)","Output Type":"DC","Standard":"UL","Packaging":"Tape and Reel","Operating Temperature Classification":"Industrial","Operating Temp Range":"-55C to 100C","Package Type":"PDIP SMD","Rad Hardened":"No","Input Type":"DC","Maximum Forward Current":"80(mA)","Current Transfer Ratio":"500(%)","Power Dissipation":"0.25(W)","Pin Count...

{"Collector Current (DC) ":"0.15(A)","Output Device":"Darlington With Base","Isolation Voltage":"4170(V)","Forward Current":"80(mA)","Reverse Breakdown Voltage":"3(V)","Mounting":"Surface Mount","Operating Temp Range":"-40C to 100C","Output Type":"DC","Standard":"UL/CUL","Packaging":"Bag","Operating Temperature Classification":"Industrial","Forward Voltage":"1.5(V)","Package Type":"PDIP SMD","Rad Hardened":"No","Input Type":"DC","Maximum Forward Current":"80(mA)","Current Transfer Ratio":"500(%)","Power Dis...

{"P(D) Max.(W) Power Dissipation":"250m","CTR Min.(%)Current Trans.Ratio":"500","V(F) Max.(V) Forward Voltage":"1.5","Status":"Discontinued","I(C) Abs.(A) Collector Current":"100m","t(resp) Max.(s) Response Time":"100u","Number of Channels":"1","Package":"FP","@V(CE) (V) (Test Condition)":"10","V(BR)CEO (V) Breakdown Voltage":"25","@I(F) (A) (Test Condition)":"1.0m","Viso Max.(V) Isolation Voltage":"1.0k","I(F) Max. (A) Forward Current":"60m","Semiconductor Material":"GaAs : Si","I(CEO) Max. (A) Dark Out.Cu...

{"P(D) Max.(W) Power Dissipation":"250m","CTR Min.(%)Current Trans.Ratio":"500","V(F) Max.(V) Forward Voltage":"1.5","Status":"Discontinued","I(C) Abs.(A) Collector Current":"100m","t(resp) Max.(s) Response Time":"100u","Number of Channels":"1","Package":"FP","@V(CE) (V) (Test Condition)":"10","V(BR)CEO (V) Breakdown Voltage":"25","@I(F) (A) (Test Condition)":"1.0m","Viso Max.(V) Isolation Voltage":"1.0k","I(F) Max. (A) Forward Current":"60m","Semiconductor Material":"GaAs : Si","I(CEO) Max. (A) Dark Out.Cu...

{"Package":"SO","@V(CE) (V) (Test Condition)":"10","P(D) Max.(W) Power Dissipation":"150m","V(BR)CEO (V) Breakdown Voltage":"25","CTR Min.(%)Current Trans.Ratio":"500","@I(F) (A) (Test Condition)":"1.0m","I(F) Max. (A) Forward Current":"60m","V(F) Max.(V) Forward Voltage":"1.5","Viso Max.(V) Isolation Voltage":"2.5k","I(C) Abs.(A) Collector Current":"100m","Semiconductor Material":"GaAs : Si","t(resp) Max.(s) Response Time":"100u","Number of Channels":"1","I(CEO) Max. (A) Dark Out.Cur.":"100n"}...