Product Datasheet Search Results:

FS30VSJ-2-T1.pdf4 Pages, 186 KB, Scan
FS30VSJ-2-T1
Mitsubishi Electric & Electronics Usa, Inc.
30 A, 100 V, 0.091 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S

Product Details Search Results:

Mitsubishichips.com/FS30VSJ-2-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0910 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Surf...
1516 Bytes - 08:38:19, 17 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
VMPAL-AP-20-QS3_8_-2-T1.pdf10.511Request
VMPAL-AP-20-QS5_16_-2-T1.pdf10.511Request
VMPAL-AP-14-QS5_16_-2-T1.pdf10.511Request
VMPAL-AP-14-QS1_4_-2-T1.pdf10.511Request
VMPAL-AP-10-QS1_4_-2-T1.pdf10.511Request
VMPAL-AP-10-QS5_32_-2-T1.pdf10.511Request