Product Datasheet Search Results:
4 Pages, 195 KB, Scan- FS10VS-6-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 300 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Mitsubishichips.com/FS10VS-6-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"300 V","Transistor Application":"SWITCHING","Surfa...
1499 Bytes - 12:19:55, 17 February 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IFS100V12PT4.pdf | 0.36 | 1 | Request | |
| FS10R12VT3.pdf | 0.24 | 1 | Request | |
| FS100R12PT4.pdf | 0.57 | 1 | Request | |
| FS100R07N3E4_B11.pdf | 0.51 | 1 | Request | |
| FS100R07N3E4.pdf | 0.50 | 1 | Request | |
| FS100R06KE3.pdf | 0.33 | 1 | Request | |
| FS100R17KS4F.pdf | 0.50 | 1 | Request | |
| FS100R12KT4.pdf | 0.27 | 1 | Request | |
| FS100R07N2E4_B11.pdf | 0.51 | 1 | Request | |
| IFS100B12N3T4_B31.pdf | 0.32 | 1 | Request | |
| FS100R17KE3.pdf | 0.28 | 1 | Request | |
| IFS100B12N3E4_B31.pdf | 0.48 | 1 | Request |
