Product Datasheet Search Results:
- FS10VS-5-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 250 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Mitsubishichips.com/FS10VS-5-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"250 V","Transistor Application":"SWITCHING","Surfa...
1499 Bytes - 19:42:53, 07 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
IFS100V12PT4.pdf | 0.36 | 1 | Request | |
FS10R12VT3.pdf | 0.24 | 1 | Request | |
FS100R12PT4.pdf | 0.57 | 1 | Request | |
FS100R07N3E4_B11.pdf | 0.51 | 1 | Request | |
FS100R07N3E4.pdf | 0.50 | 1 | Request | |
FS100R06KE3.pdf | 0.33 | 1 | Request | |
FS100R17KS4F.pdf | 0.50 | 1 | Request | |
FS100R12KT4.pdf | 0.27 | 1 | Request | |
FS100R07N2E4_B11.pdf | 0.51 | 1 | Request | |
IFS100B12N3T4_B31.pdf | 0.32 | 1 | Request | |
FS100R17KE3.pdf | 0.28 | 1 | Request | |
IFS100B12N3E4_B31.pdf | 0.48 | 1 | Request |