Product Datasheet Search Results:

FS10VS-06-T2.pdf4 Pages, 195 KB, Scan
FS10VS-06-T2
Mitsubishi Electric & Electronics Usa, Inc.
10 A, 60 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S

Product Details Search Results:

Mitsubishichips.com/FS10VS-06-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0780 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Surfac...
1513 Bytes - 21:00:09, 24 November 2024

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