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FS10ASJ-2-T13.pdf7 Pages, 167 KB, Original

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Mitsubishichips.com/FS10ASJ-2-T1
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"40 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"10 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RE...
1464 Bytes - 09:42:58, 17 November 2024

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FS100R07N3E4_B11.pdf0.511Request
FS100R12KT4.pdf0.271Request
FS100R07N2E4.pdf0.501Request
FS100R12KT4G_B11.pdf0.291Request
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FS100R07N2E4_B11.pdf0.511Request
FS100R12KT3.pdf0.321Request
FS100R07PE4.pdf0.991Request
FS10R06XL4.pdf0.231Request
FS10R12VT3.pdf0.241Request
FS100R12PT4.pdf0.571Request