Datasheet.Directory

{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Rise Time":"280 ns","Typical Turn-Off Delay Time":"125 ns","Description":"Value","Maximum Continuous Drain Current":"31 A","Package":"3D2PAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b130 V","Typical Turn-On Delay Time":"40 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"75@10V mOhm","Manufacturer":"Fairchild Semiconductor","Typical Fall Time":"115 ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"31A (Tc)","Gate Charge (Qg) @ Vgs":"78nC @ 10V","Product Photos":"TO-263","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"75 mOhm @ 15.5A, 10V","Datasheets":"FQB34N20, FQI34N20","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package"...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"3.13(W)","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...