Product Datasheet Search Results:
- FMW10N90GSC-K1
- Fuji Electric Corp. Of America
- 10 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AA
Product Details Search Results:
Fujielectric.co.jp/FMW10N90GSC-K1
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"826 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vol...
1514 Bytes - 00:16:55, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
MSFG-24DC-K10-M-EX-SA.pdf | 0.05 | 1 | Request |