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FMV11N60E.pdf5 Pages, 556 KB, Original

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Fujielectric.co.jp/FMV11N60E
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"384 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.7500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1542 Bytes - 11:38:18, 01 November 2024

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