Product Datasheet Search Results:
5 Pages, 553 KB, Original- FMP20N50ES
- Fuji Electric
- FMP20N50ES
Product Details Search Results:
Fujielectric.co.jp/FMP20N50ES
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"582 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1515 Bytes - 00:32:11, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FMP20N50ES.pdf | 0.54 | 1 | Request |
