Product Datasheet Search Results:
5 Pages, 202 KB, Scan- FK10VS-10-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 500 V, 1.13 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Mitsubishichips.com/FK10VS-10-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.13 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Application":"SWITCHING","Surface...
1503 Bytes - 06:24:08, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| N010-0510-T215.pdf | 0.13 | 1 | Request | |
| N010-0510-T219.pdf | 0.19 | 1 | Request | |
| N010-0510-T216.pdf | 0.51 | 1 | Request | |
| N010-0510-T211.pdf | 0.13 | 1 | Request | |
| N010-0510-T235.pdf | 0.05 | 1 | Request | |
| N010-0510-T222.pdf | 0.45 | 1 | Request | |
| N010-0510-T236.pdf | 0.48 | 1 | Request | |
| N010-0510-T217.pdf | 0.19 | 1 | Request |
