Product Datasheet Search Results:

FHX35LG002.pdf4 Pages, 76 KB, Original

Product Details Search Results:

Eudyna.com/FHX35LG
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"8.5 dB","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"4 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Conn...
1492 Bytes - 09:56:34, 15 November 2024
Eudyna.com/FHX35LG/002
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"METAL CERAMIC, CASE LG, 4 PIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.2900 W","Package Style":"DISK BUTTON","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"RADIAL","Transistor Type":"RF SMALL SIGNAL","Package Shape":"ROUND","Configu...
1335 Bytes - 09:56:34, 15 November 2024
Fujitsu.com/FHX35LG
{"Status":"TRANSFERRED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC PACKAGE-4","Terminal Form":"FLAT","Package Style":"DISK BUTTON","Terminal Position":"RADIAL","Transistor Type":"RF SMALL SIGNAL","Package Shape":"ROUND","Number of Terminals":"4","Surface Mount":"Yes"}...
992 Bytes - 09:56:34, 15 November 2024
Fujitsu.com/FHX35LG/002
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"METAL CERAMIC, CASE LG, 4 PIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.2900 W","Package Style":"DISK BUTTON","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"SILICON","FET Technology":"HIGH ELECTRON MOBILITY","Terminal Position":"UNSPECIFIED","Transistor Type":"RF ...
1349 Bytes - 09:56:34, 15 November 2024

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