Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"1.5V @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Gate Charge (Qg) @ Vgs":"0.31nC @ 4.5V","Product Photos":"SOT-23-3","PCN Assembly/Origin":"SOT23 Manufacturing Source 31/May2013","PCN Design/Specification":"Mold Compound 12/Dec/2007","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"10 Ohm @ 200mA, 4.5V","Datasheets":"FDV302P Molded Pkg, SUPERSOT, 3 Lea...

{"Category":"MOSFET","Maximum Drain Source Voltage":"25 V","Typical Rise Time":"8 ns","Typical Turn-Off Delay Time":"9 ns","Description":"Value","Maximum Continuous Drain Current":"0.12 A","Package":"3SOT-23","Typical Turn-On Delay Time":"5 ns","Mounting":"Surface Mount","Maximum Gate Source Voltage":"8 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"10000@4.5V mOhm","Manufacturer":"Fairchild Semiconductor"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.5V @ 250\u00b5A","Series":"-","Standard Package":"10,000","PCN Design/Specification":"Mold Compound 12/Dec/2007","Datasheets":"FDV302P Molded Pkg, SUPERSOT, 3 Lead Drawing","Rds On (Max) @ Id, Vgs":"10 Ohm @ 200mA, 4.5V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"350mW","Mounting Type":"Surface Mount","Package / Case...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.1200 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Co...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"1.5V @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"120mA (Ta)","Gate Charge (Qg) @ Vgs":"0.31nC @ 4.5V","Product Photos":"SOT-23-3","Rds On (Max) @ Id, Vgs":"10 Ohm @ 200mA, 4.5V","Datasheets":"FDV302P Molded Pkg, SUPERSOT, 3 Lead Drawing","FET Type":"MOSFET P-Channel, Metal Oxide","PCN Packaging":"Binary Year Code Marking 15/Jan/2014","Drain to Source Volt...

{"Polarity":"P","Continuous Drain Current":"0.12 A","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Gate-Source Voltage (Max)":"8 V","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOT-23","Drain-Source On-Res":"10 ohm","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"3","Channel Mode":"Enhancement","Drain-Source...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.1200 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECT...

{"Polarity":"P","Gate-Source Voltage (Max)":"8(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.12(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"25(V)","Packaging":"Tape and Reel","Power Dissipation":"0.35(W)","Rad Hardened":"No","Package Type":"SOT-23","Operating Temp Range":"-55C to 150C","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...