Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"11.6A (Ta)","Gate Charge (Qg) @ Vgs":"30nC @ 10V","Product Photos":"8-SOIC","PCN Design/Specification":"Mold Compound 12/Dec/2007","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"10 mOhm @ 11.6A, 10V","Datasheets":"FDS8880","FET Type":"MOSFET N-...

{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Rise Time":"27 ns","Typical Turn-Off Delay Time":"38 ns","Description":"Value","Maximum Continuous Drain Current":"11.6 A","Package":"8SOIC N","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"7 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"10@10V mOhm","Manufacturer":"Fairchild Semiconductor","Typical Fall Time":"15 ns"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"11.6(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...