Product Datasheet Search Results:
10 Pages, 372 KB, Original- FDB6030BLL86Z
- Fairchild Semiconductor Corporation
- 40 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Product Details Search Results:
Fairchildsemi.com/FDB6030BLL86Z
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"40 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0180 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1552 Bytes - 15:38:28, 23 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FE_A93FDB6C.pdf | 4.72 | 1 | Request | |
| ET_FDB6E41C.pdf | 2.05 | 1 | Request | |
| ET_E765FDB6.pdf | 0.13 | 1 | Request | |
| EA_34FDB63D.pdf | 0.16 | 1 | Request | |
| DF_1208FDB6.pdf | 2.53 | 1 | Request |
