Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Vgs(th) (Max) @ Id":"-","Package / Case":"TO-243AA","Current - Continuous Drain (Id) @ 25\u00b0C":"230mA (Tj)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"C04-029 MB","PCN Assembly/Origin":"Fab Site Addition 14/Aug/2014 Die Material/Assembly Site 29/Jul/2015 Fabrication Site Addition 06/Aug/2015","PCN Design/Specification":"Datasheet Update 15/Jul/2015","Rds On (Max) @ Id, Vgs":"10 Ohm @ 300mA, 0V","Datasheets":"DN2450","FET Ty...

{"Category":"MOSFET","Maximum Drain Source Voltage":"500 V","Typical Rise Time":"20(Max) ns","Description":"Value","Maximum Continuous Drain Current":"0.23 A","Package":"3SOT-89","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"15(Max) ns","Channel Mode":"Depletion","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"10@0V Ohm","Manufacturer":"Microchip"}...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"GREEN PACKAGE-3","Pulsed Drain Current-Max (IDM)":"0.9000 A","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.2300 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type...