Product Datasheet Search Results:
5 Pages, 295 KB, Original- CM10MD3-12H
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 600 V, N-CHANNEL IGBT
5 Pages, 295 KB, Original- CM10MD3-12H
- Mitsubishi Electric Semiconductor
- IGBT Module
4 Pages, 58 KB, Original- CM10MD3-12H
- Powerex, Inc. - Pa
- 10 A, 600 V, N-CHANNEL IGBT
Product Details Search Results:
Mitsubishichips.com/CM10MD3-12H
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"UNSPECIFIED","Channel Type":"N-CHANNEL","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"500 ns","Collector-emitter Voltage-Max":"600 V","Transistor Application":"MOTOR CONTROL","Turn-on Time-Nom (ton)":"420 ns","Collector Current-Max (IC)":"10 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Packa...
1411 Bytes - 11:45:11, 01 December 2024
Pwrx.com/CM10MD3-12H
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Channel Type":"N-CHANNEL","Terminal Form":"UNSPECIFIED","Number of Terminals":"21","Collector-emitter Voltage-Max":"600 V","Transistor Application":"MOTOR CONTROL","Collector Current-Max (IC)":"10 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuration":"BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDG...
1242 Bytes - 11:45:11, 01 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| CM10MD-12H.pdf | 0.13 | 1 | Request | |
| CM10MD-24H.pdf | 0.14 | 1 | Request | |
| CM10MD1-12H.pdf | 0.13 | 1 | Request | |
| CM10MD1-24H.pdf | 0.06 | 1 | Request |
