Product Datasheet Search Results:

BUV11N.pdf1 Pages, 6 KB, Original
BUV11N
American Microsemiconductor, Inc.
20 A, 160 V, NPN, Si, POWER TRANSISTOR
BUV11N.pdf1 Pages, 55 KB, Scan
BUV11N
Motorola
European Master Selection Guide 1986
BUV11N.pdf1 Pages, 117 KB, Scan
BUV11N
N/a
Semiconductor Master Cross Reference Guide

Product Details Search Results:

Americanmicrosemi.com/BUV11N
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"FORMERLY TO-3, 2 PIN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"160 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"8 MHz","Collector Current-Max (IC)":"20 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Number of Termina...
1248 Bytes - 05:59:30, 28 November 2024
Various/BUV11N
{"t(s) Max. (s) Storage time.":"1.2u","Absolute Max. Power Diss. (W)":"150","V(BR)CBO (V)":"220","h(FE) Min. Static Current Gain":"20","I(C) Abs.(A) Collector Current":"20","h(FE) Max. Current gain.":"60","I(CBO) Max. (A)":"1.5m","Package":"TO-204AA","@V(CE) (V) (Test Condition)":"2.0","f(T) Min. (Hz) Transition Freq":"8.0M","V(BR)CEO (V)":"160","Military":"N","@I(C) (A) (Test Condition)":"8.0","t(f) Max. (s) Fall time.":"250n","t(d) Max. (s) Delay time.":"1.2u"}...
908 Bytes - 05:59:30, 28 November 2024

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