Product Datasheet Search Results:
- BUK9832-55ATRL
- Nxp
- 12 A, 55 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
- BUK9832-55ATRL13
- Nxp
- 12 A, 55 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Nxp.com/BUK9832-55ATRL
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0360 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"47 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"55 V","Tr...
1475 Bytes - 15:31:03, 01 November 2024
Nxp.com/BUK9832-55ATRL13
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0360 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"47 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"55 V","Tr...
1487 Bytes - 15:31:03, 01 November 2024
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