Product Datasheet Search Results:
- BSZ110N06NS3G
- Infineon Technologies Ag
- 11 A, 60 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
- BSZ110N06NS3GATMA1
- Infineon Technologies
- Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R
- BSZ110N06NS3GXT
- Infineon Technologies Ag
- Trans MOSFET N-CH 60V 20A 8-Pin TSDSON T/R
Product Details Search Results:
Infineon.com/BSZ110N06NS3G
{"Terminal Finish":"MATTE TIN","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"55 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0110 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","China RoHS Comp...
1612 Bytes - 23:35:11, 01 November 2024
Infineon.com/BSZ110N06NS3GATMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.1(W)","Continuous Drain Current":"20(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TSDSON EP","Pin Count":"8","Type":"Power MOSFET","Drain-Source On-Res":"0.011(ohm)","Number of Elements":"1"}...
1573 Bytes - 23:35:11, 01 November 2024
Infineon.com/BSZ110N06NS3GXT
885 Bytes - 23:35:11, 01 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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BSZ110N06NS3G.pdf | 0.45 | 1 | Request |