Product Datasheet Search Results:
- BSZ018NE2LSIXT
- Infineon Technologies
- MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
Product Details Search Results:
Infineon.com/BSZ018NE2LSIXT
{"Factory Pack Quantity":"5000","Vds - Drain-Source Breakdown Voltage":"25 V","Transistor Polarity":"N-Channel","Vgs th - Gate-Source Threshold Voltage":"1.2 V to 2 V","Qg - Gate Charge":"39 nC","Package / Case":"TSDSON-8","Part # Aliases":"BSZ018NE2LSIATMA1 SP000906032","Fall Time":"3.4 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Tradename":"OptiMOS","Configuration":"Single Quad Drain Triple Source","Maximum Operating Temp...
1856 Bytes - 17:38:09, 01 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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BSZ018NE2LSI.pdf | 1.42 | 1 | Request |