Product Datasheet Search Results:
10 Pages, 254 KB, Original- BSM15GD120DN2E3224
- Eupec Power Semiconductors
- TRANS IGBT MODULE N-CH 1200V 25A 17IS3
9 Pages, 198 KB, Original- BSM15GD120DN2E3224
- Infineon Technologies
- IGBT Modules N-CH 1.2KV 25A
10 Pages, 266 KB, Original- BSM15GD120DN2E3224BOSA1
- Infineon Technologies Ag
- Trans IGBT Module N-CH 1200V 25A 145000mW
Product Details Search Results:
Infineon.com/BSM15GD120DN2E3224
{"Gate-Emitter Leakage Current":"150 nA","Continuous Collector Current at 25 C":"25 A","Product Category":"IGBT Modules","Factory Pack Quantity":"10","Brand":"Infineon Technologies","Pd - Power Dissipation":"145 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"EconoPACK 2","Configuration":"Hex","Maximum Oper...
1575 Bytes - 20:24:27, 24 March 2025
Infineon.com/BSM15GD120DN2E3224BOSA1
{"Collector Current (DC) ":"25(A)","Operating Temperature (Min)":"-40C","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"Automotive","Rad Hardened":"No","Configuration":"Hex"}...
1328 Bytes - 20:24:27, 24 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSM15GD120DN2E3224.pdf | 0.25 | 1 | Request |
