Product Datasheet Search Results:

BSM100GB120DLC.pdf8 Pages, 248 KB, Original
BSM100GB120DLCK.pdf8 Pages, 259 KB, Original
BSM100GB120DLCK
Eupec Power Semiconductors
TRANS IGBT MODULE N-CH 1200V 205A 7IS4
BSM100GB120DLK.pdf9 Pages, 107 KB, Original
BSM100GB120DLK
Eupec Power Semiconductors
TRANS IGBT MODULE N-CH 1200V 160A 7HALF BRIDGE 1
BSM100GB120DN2.pdf9 Pages, 211 KB, Original
BSM100GB120DN2K.pdf9 Pages, 195 KB, Original
BSM100GB120DLC.pdf9 Pages, 245 KB, Original
BSM100GB120DLCK.pdf8 Pages, 230 KB, Original
BSM100GB120DN2.pdf11 Pages, 153 KB, Original
BSM100GB120DN2K.pdf10 Pages, 195 KB, Original
BSM100GB120DN2KHOSA1.pdf10 Pages, 195 KB, Original
BSM100GB120DN2KHOSA1
Infineon Technologies Ag
Trans IGBT Module N-CH 1200V 145A 700000mW 7-Pin 34MM-1
BSM100GB120D.pdf8 Pages, 348 KB, Scan

Product Details Search Results:

Infineon.com/BSM100GB120D
{"Absolute Max. Power Diss. (W)":"1.0k","V(CE)sat Max.(V)":"2.8","V(BR)CES (V)":"1.2k","I(C) Abs.(A) Collector Current":"100","Package":"Module-s/q","Circuits Per Package":"1"}...
694 Bytes - 00:23:10, 01 December 2024
Infineon.com/BSM100GB120DLC
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"MATTE TIN","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"650 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"200 A","Case Connection":"ISOLATED","Turn-on Time-Nom (ton)":"190 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Packa...
1371 Bytes - 00:23:10, 01 December 2024
Infineon.com/BSM100GB120DLCK
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"480 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"110 ns","Collector Current-Max (IC)":"205 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPO...
1386 Bytes - 00:23:10, 01 December 2024
Infineon.com/BSM100GB120DN2
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HALF-BRIDGE 2, 7 PIN","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"470 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"210 ns","Collector Current-Max (IC)":"150 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GAT...
1388 Bytes - 00:23:10, 01 December 2024
Infineon.com/BSM100GB120DN2K
{"Gate-Emitter Leakage Current":"400 nA","Continuous Collector Current at 25 C":"145 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"700 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"Half Bridge1","Configuration":"Half Bridge","M...
1635 Bytes - 00:23:10, 01 December 2024
Infineon.com/BSM100GB120DN2KHOSA1
{"Collector Current (DC) ":"145(A)","Operating Temperature (Min)":"-40C","Mounting":"Screw","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"AUTOMOTIVEC","Rad Hardened":"No","Package Type":"34MM-1","Configuration":"Dual","Pin Count":"7"}...
1493 Bytes - 00:23:10, 01 December 2024

Documentation and Support

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File NameFile Size (MB)DocumentMOQSupport
BSM100GB120DLCK.pdf0.251Request
BSM100GB120DN2K.pdf0.211Request
BSM100GB120DN2.pdf0.171Request
BSM100GB120DLC.pdf0.241Request