Product Datasheet Search Results:
- BSL202SN
- Infineon Technologies
- MOSFET N-CH 20V 7.5A TSOP-6 - BSL202SN L6327
- BSL202SNH6327
- Infineon Technologies
- Trans MOSFET N-CH 20V 7.5A 6-Pin TSOP T/R
- BSL202SNH6327XTSA1
- Infineon Technologies
- MOSFET SMALL SIGNAL+P-CH
- BSL202SNH63=WR1
- Infineon Technologies
- Trans MOSFET N-CH 20V 7.5A 6-Pin TSOP T/R
- BSL202SN L6327
- Infineon Technologies
- MOSFET N-CH 20V 7.5A TSOP-6 - BSL202SN L6327
- BSL202SNL6327
- Infineon Technologies Ag
- 7500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- BSL202SNL6327XT
- Infineon Technologies Ag
- 7500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Product Details Search Results:
Infineon.com/BSL202SN
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"30 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0220 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","China R...
1526 Bytes - 14:28:16, 14 November 2024
Infineon.com/BSL202SNH6327
{"Category":"MOSFET","Maximum Drain Source Voltage":"20 V","Typical Rise Time":"27.5 ns","Typical Turn-Off Delay Time":"18.9 ns","Description":"Value","Maximum Continuous Drain Current":"7.5 A","Package":"6TSOP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b112 V","Typical Turn-On Delay Time":"8.26 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"22@4.5V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"4.06 ns"}...
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Infineon.com/BSL202SNH6327XTSA1
{"Vds - Drain-Source Breakdown Voltage":"20 V","Transistor Polarity":"N-Channel","Vgs th - Gate-Source Threshold Voltage":"700 mV","Qg - Gate Charge":"5.8 nC","Package / Case":"TSOP-6","Fall Time":"4.06 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"12 V","Brand":"Infineon Technologies","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Infineon","Id - Continuous Drain Current":"7.5 A","Rds On - Drain-Source Resistance":"22 mOhms","R...
1835 Bytes - 14:28:16, 14 November 2024
Infineon.com/BSL202SNH63=WR1
{"Category":"MOSFET","Maximum Drain Source Voltage":"20 V","Typical Rise Time":"27.5 ns","Typical Turn-Off Delay Time":"18.9 ns","Description":"Value","Maximum Continuous Drain Current":"7.5 A","Package":"6TSOP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b112 V","Typical Turn-On Delay Time":"8.26 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"22@4.5V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"4.06 ns"}...
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Infineon.com/BSL202SN L6327
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"22 mOhm @ 7.5A, 4.5V","FET Feature":"Logic Level Gate","Product Photos":"SC-74, SOT-457","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.2V @ 30\u00b5A","Series":"OptiMOS\u2122","Standard Package":"3,000","Supplier Device Package":"PG-TSOP6-6","Other Names":"BSL202SN L6327-ND BSL202SN L6327TR BSL202SNL6327 BSL202SNL6327HTSA1 SP000257782","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSL202SN","...
1838 Bytes - 14:28:16, 14 November 2024
Infineon.com/BSL202SNL6327
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0220 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1515 Bytes - 14:28:16, 14 November 2024
Infineon.com/BSL202SNL6327XT
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0220 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Surface Mount":"Yes","Mfr P...
1472 Bytes - 14:28:16, 14 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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BSL202SN.pdf | 0.21 | 1 | Request |