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BSC152N10NSFG.pdf10 Pages, 669 KB, Original

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Infineon.com/BSC152N10NSFG
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"155 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0152 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"252 A","Channel Type":"N-CHANNEL","China...
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