Product Datasheet Search Results:
9 Pages, 53 KB, Original- BLC6G22LS-130
- Nxp
- S BAND, Si, N-CHANNEL, RF POWER, MOSFET
9 Pages, 53 KB, Original- BLC6G22LS-130
- Philips Semiconductors / Nxp Semiconductors
- UHF power LDMOS transistor 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
Product Details Search Results:
Nxp.com/BLC6G22LS-130
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"SOT896-1, 3 PIN","Terminal Form":"FLAT","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Highest Frequency Band":"S BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"RF POWER","Package Shape":"...
1301 Bytes - 20:43:05, 05 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BLC6G22LS-130.pdf | 0.04 | 1 | Request |
