Product Datasheet Search Results:
- BF998E6327
- Infineon Technologies Ag
- UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
- BF998E6327HTSA1
- Infineon Technologies
- RF MOSFET Transistors N-CH 12 V 30 mA
- BF998E6327XT
- Infineon Technologies Ag
- Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143 T/R
Product Details Search Results:
Infineon.com/BF998E6327
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0300 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"12 V","Surface Mount":"Yes","Case Connection":"SOURCE",...
1459 Bytes - 00:37:22, 14 January 2026
Infineon.com/BF998E6327HTSA1
{"Product Category":"RF MOSFET Transistors","Series":"BF998","Brand":"Infineon Technologies","Packaging":"Reel","Type":"RF Small Signal MOSFET","RoHS":"Details","Manufacturer":"Infineon"}...
1238 Bytes - 00:37:22, 14 January 2026
Infineon.com/BF998E6327XT
{"Category":"MOSFET","Maximum Drain Source Voltage":"12 V","Description":"Value","Maximum Continuous Drain Current":"0.03 A","Maximum Gate Source Voltage":"\u00b18 V","Mounting":"Surface Mount","Package":"4SOT-143","Operating Temperature":"-55 to 150 \u00b0C","Manufacturer":"Infineon Technologies"}...
1237 Bytes - 00:37:22, 14 January 2026
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