Product Datasheet Search Results:
14 Pages, 397 KB, Original- BC846BT/R
- Nxp Semiconductors / Philips Semiconductors
- 65 V, 100 mA NPN general-purpose transistors - Complement: BC856B ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 65 V
7 Pages, 388 KB, Original- BC846BT/R13
- Panjit Semiconductor
- 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR
7 Pages, 388 KB, Original- BC846BT/R7
- Panjit Semiconductor
- 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Product Details Search Results:
Panjit.com.tw/BC846BT/R13
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC PACKAGE-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"65 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Terminal Position":"DUAL","Transistor...
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Panjit.com.tw/BC846BT/R7
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC PACKAGE-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"65 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Terminal Position":"DUAL","Transistor...
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Semiconductors.philips.com/BC846BT/R
{"Absolute Max. Power Diss. (W)":"300m","Noise Figure Max. (dB)":"10","V(BR)CBO (V)":"80","h(FE) Min. Static Current Gain":"200","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"450","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"15n","@V(CBO) (V) (Test Condition)":"30","Package":"TO-236AA","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"100M","V(BR)CEO (V)":"65","Military":"N","@I(C) (A) (Test Condition)":"200u","Semiconductor Material":"Silicon","C(obo) (...
1102 Bytes - 07:52:04, 13 November 2024
